? by semikron 0898 b 6 C 57 absolute maximum ratings values symbol conditions 1) units v ces v cgr i c i cm v ges p tot t j , (t stg ) v isol humidity climate r ge = 20 k w t case = 25/60 c t case = 25/60 c; t p = 1 ms per igbt, t case = 25 c ac, 1 min. din 40040 din iec 68 t.1 600 600 475 / 400 950 / 800 20 1400 C40 ... +150 (125) 2500 class f 40/125/56 v v a a v w c v inverse diode; free wheelin g diode fwd i f = Ci c i fm = Ci cm i fsm i 2 t t case = 25/80 c t case = 25/80 c; t p = 1 ms t p = 10 ms; sin.; t j = 150 c t p = 10 ms; t j = 150 c 400 / 270 950 / 800 2800 39 000 a a a a 2 s characteristics symbol conditions 1) min. typ. max. units v (br)ces v ge(th) i ces i ges v cesat g fs v ge = 0, i c = 4 ma v ge = v ce , i c = 9 ma v ge = 0 t j = 25 c v ce = v ces t j = 125 c v ge = 20 v, v ce = 0 i c = 400 a v ge = 15 v; t j = 25 (125) c v ce = 20 v, i c = 400 a 3 v ces 4,5 C C C C C 80 C 5,5 5 25 C 2,3(2,2) C C C 6,5 12 C 1 2,55(2,65) C C v v ma ma m a v v s c chc c ies c oes c res l ce per igbt v ge = 0 v ce = 25 v f = 1 mhz C C C C C C 22 2,5 1,5 C 700 C C C 20 pf nf nf nf nh t d(on) t r t d(off) t f e on e off v cc = 300 v v ge = C15 v / +15 v 3) i c = 400 a, ind. load r gon = r goff = 5 w t j = 125 c C C C C C C 180 120 600 180 22 40 C C C C C C ns ns ns ns mws mws inverse diode and fwd of types ?gal, ?gar 8) v f = v ec v f = v ec v to r t i rrm q rr i f = 300 a v ge = 0 v; i f = 400 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 400 a; t j = 125 c 2) i f = 400 a; t j = 125 c 2) C C C C C C 1,5(1,4) 1,6(1,6) C C 140 19 1,65(1,6) 1,8(1,8) 0,9 3 C C v v v m w a m c thermal characteristics r thjc r thjc r thch per igbt per diode per module C C C C C C 0,09 0,15 0,038 c/w c/w c/w semitrans ? m pt-igbt modules skm 400 ga 062 d *) skm 400 gb 062 d skm 400 gal 062 d 6) skm 400 gar 062 d 6) features ? n channel, epitaxial silicon structure (pt- punch-throu g h igbt) ? hi g h short circuit capability, self limitin g , if term. g is clamped to e ? latch-up free, if clamped as above ? fast & soft inverse cal diodes 8) ? isolated copper baseplate usin g dcb direct copper bondin g technolo g y without hard mould ? lar g e clearance (13 mm) and creepa g e distances (20 mm) typical applications ? b6 C 61 ? switchin g (not for linear use) ? switched mode power supplies ? ac inverter drives ? ups uninterruptable power supplies 1) t case = 25 c, unless otherwise specified 2) i f = C i c , v r = 300 v, Cdi f /dt = 2000 a/ m s, v ge = 0 v 3) use v geoff = C5... C15 v 6) the free-wheelin g diode of the gal and gar types have the data of the inverse diodes of skm 400 gb 062 d 8) cal = controlled axial lifetime technolo g y cases and mech. data ? b6 C 62 *) semitrans4 ? b6 C 168 gb gal ga gar 6) 6) semitrans 3
? by semikron b 6 C 58 0898 skm 400 ga 062 d ... m400gb 06.xls-6 0 2 4 6 8 10 12 0 100 200 300 400 500 600 700 v ce v i csc /i c allowed numbers of short circuits: <1000 time between short circuits: >1s di/dt= 500 a/s 1400 a/s 2500 a/s m400gb 06.xls-5 0 0,5 1 1,5 2 2,5 0 100 200 300 400 500 600 700 v ce v i cpuls /i c m400gb 06.xls-4 1 10 100 1000 10000 1 10 100 1000 10000 v ce v i c a t p =60s 100s 1ms 10ms m400gb06.xls-3 0 10 20 30 40 50 60 70 80 90 0 1020304050 r g w e mws e on e off m400gb 06.xls-2 0 10 20 30 40 50 60 70 80 90 0 200 400 600 800 1000 i c a e mws e off e on m400gb06.xls-1 0 200 400 600 800 1000 1200 1400 1600 0 20 40 60 80 100 120 140 160 t c c p tot w fi g . 3 turn-on /-off ener g y = f (r g )fi g . 4 maximum safe operatin g area (soa) i c = f (v ce ) fi g . 1 rated power dissipation p tot = f (t c )fi g . 2 turn-on /-off ener g y = f (i c ) fi g . 5 turn-off safe operatin g area (rbsoa) fi g . 6 safe operatin g area at short circuit i c = f (v ce ) t j = 125 c v ce = 300 v v ge = 15 v r g = 5 w 1 pulse t c = 25 c t j 150 c t j 150 c v ge = 15 v t sc 10 s l < 25 nh i c = 400 a t j 150 c v ge = 15 v r goff = 5 w i c = 400 a t j = 125 c v ce = 300 v v ge = 15 v i c = 400 a
? by semikron 0898 b 6 C 59 i:\marketin\framedat\datbl\b06-igbt\400gb06.fm m400gb06.xls-12 0 200 400 600 800 02468101214 v g v i c a m 400gb06.xls-9 0 100 200 300 400 500 600 700 800 012345 v ce v i c a 17v 15v 13v 11v 9v 7v m 400gb06.xls-10 0 100 200 300 400 500 600 700 800 012345 v ce v i c a 17v 15v 13v 11v 9v 7v m 400gb06.xls-8 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 t c c i c a p cond(t) = v cesat(t) i c(t) v cesat(t) = v ce(to)(tj) + r ce(tj) i c(t) v ce(to)(tj) 1,3 C 0,003 (t j C25) [v] typ.: r ce(tj) = 0,0025 + 0,000005 (t j C25) [ w ] max.: r ce(tj) = 0,0031 + 0,000010 (t j C25) [ w ] valid for v ge = + 15 [v]; i c > 0,3 i cnom fi g . 9 typ. output characteristic, t p = 250 s; 25 c fi g . 10 typ. output characteristic, t p = 250 s; 125 c fi g . 8 rated current vs. temperature i c = f (t c ) +2 C1 fi g . 11 saturation characteristic (igbt) calculation elements and equations fi g . 12 typ. transfer characteristic, t p = 250 s; v ce = 20 v t j = 150 c v ge 3 15v
b 6 C 60 0898 ? by semikron skm 400 ga 062 d ... m400gb06.xls-17 0 50 100 150 200 250 300 350 400 0 0,4 0,8 1,2 1,6 2 v f v i f a t j =125c, typ. t j =25c, typ. t j =125c, max. t j =25c, max. m 400gb06.xls-18 0 1 2 3 4 0 100 200 300 400 500 i f a e offd mj 24 w 10 w 47 w 5 w r g = 3 w m 400gb06.xls-16 10 100 1000 10000 0 1020 304050 r g w t ns t dof f t don t r t f m 400gb06.xls-15 10 100 1000 0 200 400 600 800 1000 i c a t ns t doff t don t r t f m 400gb06.xls-14 0,1 1 10 100 0102030 v ce v c nf c ies c oes c res m 400gb06.xls-13 0 2 4 6 8 10 12 14 16 18 20 0 0,4 0,8 1,2 1,6 2 2,4 2,8 3,2 q gate nc v ge v 100v 300v fi g . 13 typ. g ate char g e characteristic fi g . 14 typ. capacitances vs.v ce v ge = 0 v f = 1 mhz fi g . 15 typ. switchin g times vs. i c fi g . 16 typ. switchin g times vs. g ate resistor r g fi g . 17 typ. cal diode forward characteristic fi g . 18 diode turn-off ener g y dissipation per pulse t j = 125 c v ce = 300 v v ge = 15 v i c = 400 a induct. load i cpuls = 400 a t j = 125 c v ce = 300 v v ge = 15 v r gon = 5 w r goff = 5 w induct. load v r = 300 v t j = 125 c v ge = 15 v
? by semikron b 6 C 61 0898 m400gb06.xls-23 0 50 100 150 200 250 0 1000 2000 3000 4000 di f / dt a/s i rr a 24 w 10 w 47 w 5 w r g = 3 w m400gb06.xls-24 0 5 10 15 20 25 0 1000 2000 3000 4000 di f /dt a/s q rr c i f = 300 a 200 a 150 a 100 a 24 w 10 w 47 w 5 w r g = 3 w 400 a m400gb06.xls-22 0 50 100 150 200 250 0 100 200 300 400 500 i f a i rr a 24 w 10 w 47 w 5 w r g = 3 w m400gb06.xls-20 0,00001 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 1 s z thjc k/w d=0,5 0,2 0,1 0,05 0,02 0,01 single pulse t p m400gb06.xls-19 0,00001 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 1 t p s z thjc k/w d=0,50 0,20 0,10 0,05 0,02 0,01 single pulse fi g . 19 transient thermal impedance of igbt z thjc = f (t p ); d = t p / t c = t p f fi g . 20 transient thermal impedance of inverse cal diodes z thjc = f (t p ); d = t p / t c = t p f fi g . 22 typ. cal diode peak reverse recovery current i rr = f (i f ; r g ) fi g . 23 typ. cal diode peak reverse recovery current i rr = f (di/dt) fi g . 24 typ. cal diode recovered char g e typical applications include switched mode power supplies dc servo and robot drives inverters dc choppers ac motor speed control ups uninterruptable power supplies general power switchin g applications v r = 300 v t j = 125 c v ge = 15 v v r = 300 v t j = 125 c v ge = 15 v i f = 300 a v r = 300 v t j = 125 c v ge = 15 v
? by semikron b 6 C 62 skm 400 ga 062 d ... 0898 semitrans 3 case d 56 ul recognized file no. e 63 532 skm 400 gb 062 d dimensions in mm skm 400 gal 062 d case d 57 ( ? d 56) skm 400 gar 062 d case d 58 ( ? d 56) case outline and circuit diagrams 6) freewheeling diode ? b 6 C 57, remark 6. mechanical data symbol conditions values units min. typ. max. m 1 m 2 a w to heatsink, si units(m6) to heatsink, us units for terminals, si units(m6) for terminals, us units 3 27 2,5 22 C C C C C C C C 5 44 5 44 5x9,81 330 nm lb.in. nm lb.in. m/s 2 g this is an electrostatic discharge sensitive device (esds). please observe the international standard iec 747-1, chapter ix. three devices are supplied in one semibox a without mounting hardware, which can be ordered separately under ident no. 33321100 (for 10 semitrans 3). larger packing units of 12 and 20 pieces are used if suitable accessories ? b 6 - 4. semibox ? c - 1.
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